Free samples MOSFET P-Channel 20V 3.1A 1.6W SI2301 SI2301CDS-T1-GE3 SOT-23

Name: Free Samples Mosfet P-channel 20v 3.1a 1.6w Si2301 Si2301cds-t1-ge3 Sot-23 - Buy Free Samples Mosfet P-channel 20v 3.1a 1.6w Si2301 Si2301cds-t1-ge3 Sot-23 Product on Alibaba.com
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SKU: 1601114948372

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Shenzhen Fangtuoda Technology Co., Ltd.1 yr

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Key attributes

Industry-specific attributes

Model Number

SI2301CDS-T1-GE3

Type

MOSFET

Brand Name

Original Brand

Package Type

Surface Mount

Other attributes

Mounting Type

SMD/SMT

Description

MOSFET -20V Vds 8V Vgs SOT-23

Place of Origin

Guangdong, China

Package / Case

SOT-23-3

Type

MOSFET

Operating Temperature

- 55 C~+150 C

Series

SI2

Application

Load Switch

Supplier Type

Original manufacturer, ODM, Agency

Cross Reference

SI2301CDS-T1-E3, SI2301CDS-T1-GE3

Brand

MOSFET

Voltage - Collector Emitter Breakdown (Max)

Standard

Vce Saturation (Max) @ Ib, Ic

Standard

DC Current Gain (hFE) (Min) @ Ic, Vce

Standard

Operating Temperature

Standard

Mounting Type

Surface Mount

Resistor - Base (R1)

Standard

Resistor - Emitter Base (R2)

Standard

FET Type

P-Channel

FET Feature

Silicon Carbide (SiC)

Drain to Source Voltage (Vdss)

Standard

Current - Continuous Drain (Id) @ 25°C

Standard

Rds On (Max) @ Id, Vgs

Standard

Vgs(th) (Max) @ Id

Standard

Gate Charge (Qg) (Max) @ Vgs

Standard

Input Capacitance (Ciss) (Max) @ Vds

Standard

Frequency

Standard

Current Rating (Amps)

Standard

Noise Figure

Standard

Power - Output

Standard

Voltage - Rated

Standard

Drive Voltage (Max Rds On, Min Rds On)

Standard

Vgs (Max)

Standard

IGBT Type

Reference Description

Configuration

Reference Description

Vce(on) (Max) @ Vge, Ic

Reference Description

Input Capacitance (Cies) @ Vce

Reference Description

Input

Reference Description

NTC Thermistor

Reference Description

Voltage - Breakdown (V(BR)GSS)

Reference Description

Current - Drain (Idss) @ Vds (Vgs=0)

Reference Description

Current Drain (Id) - Max

Reference Description

Voltage - Cutoff (VGS off) @ Id

Reference Description

Resistance - RDS(On)

Reference Description

Voltage

Reference Description

Voltage - Output

Reference Description

Voltage - Offset (Vt)

Reference Description

Current - Gate to Anode Leakage (Igao)

Reference Description

Current - Valley (Iv)

Reference Description

Current - Peak

Reference Description

Applications

Reference Description

Transistor Type

TrenchFET

Transistor Polarity

P-Channel

Number of Channels

1 Channel

Vds - Drain-Source Breakdown Voltage

20 V

Id - Continuous Drain Current

3.1 A

Rds On - Drain-Source Resistance

112 mOhms

Vgs - Gate-Source Voltage

- 8 V, + 8 V

Vgs th - Gate-Source Threshold Voltage

1 V

Operating Temperature

- 55 C~+150 C

MPQ

3000

Pd - Power Dissipation

1.6W

Lead time

Quantity (pieces)	1 - 30000	> 30000
Lead time (days)	3	To be negotiated

Customization

Customized packaging

Min. order: 300000

Customized logo

Min. order: 300000

For more customization details, message supplier

Product descriptions from the supplier

>= 3000 pieces

$0.05

Variations

Total options:

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